SEMICONDUCTOR DEVICE

To provide a semiconductor device with higher reliability.SOLUTION: A semiconductor device includes a first electrode plate including a first surface and a second surface positioning on a rear surface side of the first surface, a second electrode plate disposed to face the first surface of the first electrode plate, at least one semiconductor element disposed between the first electrode plate and the second electrode plate and connected to the first electrode plate and the second electrode plate, a first cooler disposed to face the second surface of the first electrode plate, and a first intermediate member disposed between, and bonded to both the first electrode plate and the first cooler. The first intermediate member includes a laminate structure including a first layer with a first linear expansion coefficient, a second layer with a second linear expansion coefficient. The first layer is disposed so as to exist between the first electrode plate and the second layer. The linear expansion coefficient of the material of the first electrode plate is closer to the first linear expansion coefficient than to the second linear expansion coefficient. The linear expansion coefficient of the material of the first cooler is closer to the second linear expansion coefficient than to the first linear expansion coefficient.SELECTED DRAWING: Figure 1 【課題】信頼性を向上させた半導体装置を提供する。【解決手段】半導体装置は、第１表面と、前記第１表面の裏面側に位置する第２表面と、を有する第１電極板と、前記第１電極板の前記第１表面に対向して配置された第２電極板と、前記第１電極板と前記第２電極板との間に配置され、前記第１電極板および前記第２電極板に接続された少なくとも１つの半導体素子と、前記第１電極板の前記第２表面に対向して配置される第１冷却器と、前記第１電極板と前記第１冷却器の間に配置され、両者に接合される第１中間部材と、を備える。前記第１中間部材は、第１線膨張係数を有する第１層と、第２線膨張係数を有する第２層と、を含む積層構造を有し、前記第１電極板と前記第２層との間に前記第１層が位置するように配置される。前記第１電極板の材料の線膨張係数は、前記第２線膨張係数よりも前記第１線膨張係数に近く、前記第１冷却器の材料の線膨張係数は、前記第１線膨張係数よりも前記第２線膨張係数に近い。【選択図】図１