MAGNETIC MEMORY

To provide a magnetic memory in which magnetoresistance effect elements are efficiently integrated.SOLUTION: A magnetic memory includes: a plurality of magnetoresistive effect elements; first wires connected across first ferromagnetic metal layers; spin orbit torque wires connected to respective second ferromagnetic metal layers of the plurality of magnetoresistive effect elements; first control elements connected to the first wires; a second control element connected to respective first connection points of the plurality of spin orbit torque wires; and a plurality of first cell selection elements connected to respective second connection points of the plurality of spin orbit torque wires. In any of write operations for the plurality of magnetoresistive effect elements, a potential difference is applied in a stacking direction of the magnetoresistive effect element in which the write operation is performed, and a current is applied along the spin orbit torque wire connected to the magnetoresistive effect element in which the write operation is performed.SELECTED DRAWING: Figure 2 【課題】磁気抵抗効果素子が効率的に集積された磁気メモリを提供することを目的とする。【解決手段】本実施形態にかかる磁気メモリは、複数の磁気抵抗効果素子と、第１強磁性金属層に亘って接続された第１配線と、前記複数の磁気抵抗効果素子のそれぞれの第２強磁性金属層に接続されたスピン軌道トルク配線と、前記第１配線に接続された第１制御素子と、前記複数のスピン軌道トルク配線のそれぞれの第１接続点に接続された第２制御素子と、前記複数のスピン軌道トルク配線のそれぞれの第２接続点にそれぞれ接続される複数の第１セル選択素子と、を備え、前記複数の磁気抵抗効果素子のうちのいずれかの書き込み動作時において、書き込み動作が行われる磁気抵抗効果素子の積層方向に電位差を印加すると共に、書き込み動作が行われる磁気抵抗効果素子に接続されたスピン軌道トルク配線に沿って電流を印加する。【選択図】図２