IMAGE SENSOR
To provide an image sensor in which the interference between pixels is reduced.SOLUTION: An image sensor includes: a semiconductor substrate including a plurality of pixel regions separated by a separation region, a first surface and a second surface to which light is incident and which is disposed...
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Zusammenfassung: | To provide an image sensor in which the interference between pixels is reduced.SOLUTION: An image sensor includes: a semiconductor substrate including a plurality of pixel regions separated by a separation region, a first surface and a second surface to which light is incident and which is disposed opposite to the first surface; a plurality of color filters disposed on the second surface of the semiconductor substrate to correspond to the respective pixel regions; a cover insulating layer disposed on the second surface of the semiconductor substrate and covering the color filters; a plurality of first transparent electrodes disposed apart from each other on the cover insulating layer and each including a region overlapping with each of the color filters; a separation pattern disposed between the first transparent electrodes on the cover insulating layer and including a trench at a position apart from the first transparent electrodes; a drain electrode disposed in the trench of the separation pattern; and an organic photoelectric layer and a second transparent electrode disposed sequentially on the first transparent electrodes and the separation pattern.SELECTED DRAWING: Figure 3
【課題】ピクセル間の干渉を低減させたイメージセンサーを提供する。【解決手段】分離領域によって分離された複数のピクセル領域を含み、第1面と、光が入射され第1面と対向して位置する第2面と、を有する半導体基板と、半導体基板の第2面上に、複数のピクセル領域にそれぞれ対応するように配置される複数のカラーフィルターと、半導体基板の第2面上に配置され、複数のカラーフィルターを覆うカバー絶縁層と、カバー絶縁層上に、互いに離隔して配置され、それぞれ複数のカラーフィルターと重なる領域を有する複数の第1透明電極と、カバー絶縁層上に、複数の第1透明電極間に配置され、複数の第1透明電極から離隔された位置にトレンチを有する分離パターンと、分離パターンのトレンチ内に配置されるドレイン電極と、複数の第1透明電極及び分離パターン上に順次に配置される有機光電層及び第2透明電極と、を有する。【選択図】 図3 |
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