SiC MATERIAL AND SiC COMPOSITE MATERIAL
To provide an SiC material and an SiC composite material which are stably and evenly etched in a plasma environment.SOLUTION: In the SiC material and the SiC composite material, a diffraction intensity ratio (I) of an X-ray diffraction peak calculated by formula (1) defined by [diffraction intensity...
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creator | KIM JOUNG-IL |
description | To provide an SiC material and an SiC composite material which are stably and evenly etched in a plasma environment.SOLUTION: In the SiC material and the SiC composite material, a diffraction intensity ratio (I) of an X-ray diffraction peak calculated by formula (1) defined by [diffraction intensity ratio (I)]={[peak intensity of plane (200)]+[peak intensity of plane (220)]}/[peak intensity of plane (111)] is less than 1.5.SELECTED DRAWING: Figure 1C
【課題】プラズマ環境で安定的で均一にエッチングされるSiC素材及びSiC複合素材の提供。【解決手段】下記の式(1)により算出されるX−回折ピークの回折強度比(I)が1.5未満であるSiC素材及びSiC複合素材を開示する。【選択図】図1C |
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【課題】プラズマ環境で安定的で均一にエッチングされるSiC素材及びSiC複合素材の提供。【解決手段】下記の式(1)により算出されるX−回折ピークの回折強度比(I)が1.5未満であるSiC素材及びSiC複合素材を開示する。【選択図】図1C</description><language>eng ; jpn</language><subject>ARTIFICIAL STONE ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; COMPOUNDS THEREOF ; CONCRETE ; INORGANIC CHEMISTRY ; LIME, MAGNESIA ; METALLURGY ; NON-METALLIC ELEMENTS ; REFRACTORIES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210430&DB=EPODOC&CC=JP&NR=2021066657A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25571,76555</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210430&DB=EPODOC&CC=JP&NR=2021066657A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KIM JOUNG-IL</creatorcontrib><title>SiC MATERIAL AND SiC COMPOSITE MATERIAL</title><description>To provide an SiC material and an SiC composite material which are stably and evenly etched in a plasma environment.SOLUTION: In the SiC material and the SiC composite material, a diffraction intensity ratio (I) of an X-ray diffraction peak calculated by formula (1) defined by [diffraction intensity ratio (I)]={[peak intensity of plane (200)]+[peak intensity of plane (220)]}/[peak intensity of plane (111)] is less than 1.5.SELECTED DRAWING: Figure 1C
【課題】プラズマ環境で安定的で均一にエッチングされるSiC素材及びSiC複合素材の提供。【解決手段】下記の式(1)により算出されるX−回折ピークの回折強度比(I)が1.5未満であるSiC素材及びSiC複合素材を開示する。【選択図】図1C</description><subject>ARTIFICIAL STONE</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMISTRY</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>COMPOUNDS THEREOF</subject><subject>CONCRETE</subject><subject>INORGANIC CHEMISTRY</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>REFRACTORIES</subject><subject>SLAG</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAPznRW8HUMcQ3ydPRRcPRzUQAJOPv7BvgHe4a4wqV4GFjTEnOKU3mhNDeDkptriLOHbmpBfnxqcUFicmpeakm8V4CRgZGhgZmZmam5ozFRigAsliRK</recordid><startdate>20210430</startdate><enddate>20210430</enddate><creator>KIM JOUNG-IL</creator><scope>EVB</scope></search><sort><creationdate>20210430</creationdate><title>SiC MATERIAL AND SiC COMPOSITE MATERIAL</title><author>KIM JOUNG-IL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021066657A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>ARTIFICIAL STONE</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMISTRY</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>COMPOUNDS THEREOF</topic><topic>CONCRETE</topic><topic>INORGANIC CHEMISTRY</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>REFRACTORIES</topic><topic>SLAG</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>KIM JOUNG-IL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KIM JOUNG-IL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SiC MATERIAL AND SiC COMPOSITE MATERIAL</title><date>2021-04-30</date><risdate>2021</risdate><abstract>To provide an SiC material and an SiC composite material which are stably and evenly etched in a plasma environment.SOLUTION: In the SiC material and the SiC composite material, a diffraction intensity ratio (I) of an X-ray diffraction peak calculated by formula (1) defined by [diffraction intensity ratio (I)]={[peak intensity of plane (200)]+[peak intensity of plane (220)]}/[peak intensity of plane (111)] is less than 1.5.SELECTED DRAWING: Figure 1C
【課題】プラズマ環境で安定的で均一にエッチングされるSiC素材及びSiC複合素材の提供。【解決手段】下記の式(1)により算出されるX−回折ピークの回折強度比(I)が1.5未満であるSiC素材及びSiC複合素材を開示する。【選択図】図1C</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY NON-METALLIC ELEMENTS REFRACTORIES SLAG TREATMENT OF NATURAL STONE |
title | SiC MATERIAL AND SiC COMPOSITE MATERIAL |
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