SiC MATERIAL AND SiC COMPOSITE MATERIAL

To provide an SiC material and an SiC composite material which are stably and evenly etched in a plasma environment.SOLUTION: In the SiC material and the SiC composite material, a diffraction intensity ratio (I) of an X-ray diffraction peak calculated by formula (1) defined by [diffraction intensity...

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1. Verfasser:	KIM JOUNG-IL
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS COMPOUNDS THEREOF CONCRETE INORGANIC CHEMISTRY LIME, MAGNESIA METALLURGY NON-METALLIC ELEMENTS REFRACTORIES SLAG TREATMENT OF NATURAL STONE
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Beschreibung
Zusammenfassung:	To provide an SiC material and an SiC composite material which are stably and evenly etched in a plasma environment.SOLUTION: In the SiC material and the SiC composite material, a diffraction intensity ratio (I) of an X-ray diffraction peak calculated by formula (1) defined by [diffraction intensity ratio (I)]={[peak intensity of plane (200)]+[peak intensity of plane (220)]}/[peak intensity of plane (111)] is less than 1.5.SELECTED DRAWING: Figure 1C 【課題】プラズマ環境で安定的で均一にエッチングされるＳｉＣ素材及びＳｉＣ複合素材の提供。【解決手段】下記の式（１）により算出されるＸ−回折ピークの回折強度比（Ｉ）が１．５未満であるＳｉＣ素材及びＳｉＣ複合素材を開示する。【選択図】図１C