SEMICONDUCTOR DEVICE

To form an active area laminated on a PZT (lead zirconate titanate (PbZrTiO3)) sensor having a piezoelectric effect.SOLUTION: A semiconductor device has a PZT (lead zirconate titanate (PbZrTiO3)) sensor, and the PZT sensor has a lower electrode 101 that is formed on a glass substrate 100, a PZT 102,...

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Bibliographische Detailangaben
Hauptverfasser:	ITOGA TOSHIHIKO, KAITO TAKUO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC DIGITAL DATA PROCESSING ELECTRIC HEATING ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	To form an active area laminated on a PZT (lead zirconate titanate (PbZrTiO3)) sensor having a piezoelectric effect.SOLUTION: A semiconductor device has a PZT (lead zirconate titanate (PbZrTiO3)) sensor, and the PZT sensor has a lower electrode 101 that is formed on a glass substrate 100, a PZT 102, an upper electrode 103, a first inorganic insulating film 104 that covers the upper electrode, and upper wiring 105 that is formed on the first inorganic insulating film 104 and is in contact with the upper electrode 103 through a first through hole 130 formed on the inorganic insulating film 104. A polyimide film 106 is formed covering the PZT sensor. An active area is formed on the polyimide film 106. The thickness of the polyimide film 106 is 5 μm or more.SELECTED DRAWING: Figure 2 【課題】圧電効果を有するＰＺＴ（チタン酸ジルコン鉛（ＰｂＺｒＴｉＯ３））センサと積層して、アクティブ領域を形成する。【解決手段】ＰＺＴ（チタン酸ジルコン鉛（ＰｂＺｒＴｉＯ３））センサを有する半導体装置であって、前記ＰＺＴセンサは、ガラス基板１００の上に形成された下部電極１０１、ＰＺＴ１０２、上部電極１０３、前記上部電極を覆う第１の無機絶縁膜１０４、前記第１の無機絶縁膜１０４の上に形成され、前記無機絶縁膜１０４に形成された第１のスルーホール１３０を介して前記上部電極１０３と接続した上部配線１０５を有し、前記ＰＺＴセンサを覆ってポリイミド膜１０６が形成され、前記ポリイミド膜１０６の上にアクティブ領域が形成され、前記ポリイミド膜１０６の厚さは、５μｍ以上であることを特徴とする半導体装置。【選択図】図２