SEMICONDUCTOR DEVICE

To prevent an erroneous ignition in a half-bridge circuit.SOLUTION: Variable voltage sources (110H, 110L) are provided for respective transistors (TrH, TrL) constituting a half-bridge circuit. When one transistor is turned on from a dead time state, a voltage change occurs between a drain and a sour...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	ISHIDO RYOSUKE, OKOCHI YUTA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRICITY GENERATION PULSE TECHNIQUE
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Beschreibung
Zusammenfassung:	To prevent an erroneous ignition in a half-bridge circuit.SOLUTION: Variable voltage sources (110H, 110L) are provided for respective transistors (TrH, TrL) constituting a half-bridge circuit. When one transistor is turned on from a dead time state, a voltage change occurs between a drain and a source in the other transistor. The variable voltage source provided for the other transistor supplies a voltage according to the voltage change to a path between a gate and the source in the other transistor, thereby preventing a current caused by the voltage change from flowing to a gate-source capacity in the other transistor.SELECTED DRAWING: Figure 7 【課題】ハーフブリッジ回路における誤点弧を防止する。【解決手段】ハーフブリッジ回路を構成する各トランジスタ（ＴｒＨ、ＴｒＬ）に対し、可変電圧源（１１０Ｈ、１１０Ｌ）を設けておく。デッドタイム状態から一方のトランジスタがターンオンする際、他方のトランジスタのドレイン−ソース間に電圧変化が生じる。他方のトランジスタに対して設けられた可変電圧源は、その電圧変化に応じた電圧を他方のトランジスタのゲート−ソース間に供給することで、他方のトランジスタのゲート−ソース間容量に上記電圧変化に起因する電流が流れることを抑止する。【選択図】図７