MEMBER FOR SEMICONDUCTOR MANUFACTURING DEVICE, SEMICONDUCTOR MANUFACTURING DEVICE HAVING THE SAME, AND DISPLAY MANUFACTURING DEVICE

To provide a member for a semiconductor manufacturing device, which can decrease particles.SOLUTION: Provided is a member for a semiconductor manufacturing device, which comprises: a base material a first face, a second face crossing the first face, and a ridge portion connecting the first face and...

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Bibliographische Detailangaben
Hauptverfasser:	WADA TAKUMA, NITTA YASUTAKA, TAKIZAWA AKIHITO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To provide a member for a semiconductor manufacturing device, which can decrease particles.SOLUTION: Provided is a member for a semiconductor manufacturing device, which comprises: a base material a first face, a second face crossing the first face, and a ridge portion connecting the first face and the second face; and a particle resistance layer covering the first face, the second face and the ridge portion and consisting of a polycrystalline ceramic, which includes a first particle resistance layer provided on the ridge portion and a second particle resistance layer provided on the first face. The first particle resistance layer is higher than the second particle resistance layer in particle resistance.SELECTED DRAWING: Figure 2 【課題】パーティクルを低減することができる半導体製造装置用部材を提供する。【解決手段】第１面と、前記第１面と交差する第２面と、前記第１面と前記第２面とを接続する稜部分と、を含む基材と、前記第１面、前記第２面、および前記稜部分を覆い、多結晶セラミックスを含む耐パーティクル層であって、前記稜部に設けられた第１耐パーティクル層と、前記第１面に設けられた第２耐パーティクル層と、を含む耐パーティクル層と、を備え、前記第１耐パーティクル層の耐パーティクル性は、前記第２耐パーティクル層の耐パーティクル性よりも高い、半導体製造装置用部材を提供する。【選択図】図２