IMAGING ELEMENT AND IMAGING APPARATUS
To provide an imaging element that can accurately correct dark current irregularities.SOLUTION: In an imaging element, microlenses 400 that focus light are arranged in a matrix consisting of n rows and m columns. An aperture APD (avalanche photodiode) 301 is placed in a light collection area of the...
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| description | To provide an imaging element that can accurately correct dark current irregularities.SOLUTION: In an imaging element, microlenses 400 that focus light are arranged in a matrix consisting of n rows and m columns. An aperture APD (avalanche photodiode) 301 is placed in a light collection area of the microlens 400 as a photoelectric conversion unit. A light-shielding APD 302 is placed in a gap of the aperture APD 301 and outside the light collection area of the microlens 400. A light-shielding layer 401 is placed on an upper side of the light-shielding APD 302.SELECTED DRAWING: Figure 4
【課題】暗電流ムラを精度よく補正可能な撮像素子を提供する。【解決手段】撮像素子には、光を集光するマイクロレンズ４００がｎ行ｍ列からなるマトリクス状に配置されている。マイクロレンズ４００の集光領域内に、光電変換部として開口ＡＰＤ（アバランシェフォトダイオード）３０１が配置されている。開口ＡＰＤ３０１の隙間であって、マイクロレンズ４００の集光領域外に遮光ＡＰＤ３０２が配置される。遮光ＡＰＤ３０２の上側には遮光層４０１が配置される。【選択図】図４ |
| format | Patent |
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【課題】暗電流ムラを精度よく補正可能な撮像素子を提供する。【解決手段】撮像素子には、光を集光するマイクロレンズ４００がｎ行ｍ列からなるマトリクス状に配置されている。マイクロレンズ４００の集光領域内に、光電変換部として開口ＡＰＤ（アバランシェフォトダイオード）３０１が配置されている。開口ＡＰＤ３０１の隙間であって、マイクロレンズ４００の集光領域外に遮光ＡＰＤ３０２が配置される。遮光ＡＰＤ３０２の上側には遮光層４０１が配置される。【選択図】図４</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC COMMUNICATION TECHNIQUE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; PICTORIAL COMMUNICATION, e.g. TELEVISION ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210318&DB=EPODOC&CC=JP&NR=2021044782A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210318&DB=EPODOC&CC=JP&NR=2021044782A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KUMAKI SATOSHI</creatorcontrib><title>IMAGING ELEMENT AND IMAGING APPARATUS</title><description>To provide an imaging element that can accurately correct dark current irregularities.SOLUTION: In an imaging element, microlenses 400 that focus light are arranged in a matrix consisting of n rows and m columns. An aperture APD (avalanche photodiode) 301 is placed in a light collection area of the microlens 400 as a photoelectric conversion unit. A light-shielding APD 302 is placed in a gap of the aperture APD 301 and outside the light collection area of the microlens 400. A light-shielding layer 401 is placed on an upper side of the light-shielding APD 302.SELECTED DRAWING: Figure 4
【課題】暗電流ムラを精度よく補正可能な撮像素子を提供する。【解決手段】撮像素子には、光を集光するマイクロレンズ４００がｎ行ｍ列からなるマトリクス状に配置されている。マイクロレンズ４００の集光領域内に、光電変換部として開口ＡＰＤ（アバランシェフォトダイオード）３０１が配置されている。開口ＡＰＤ３０１の隙間であって、マイクロレンズ４００の集光領域外に遮光ＡＰＤ３０２が配置される。遮光ＡＰＤ３０２の上側には遮光層４０１が配置される。【選択図】図４</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC COMMUNICATION TECHNIQUE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>PICTORIAL COMMUNICATION, e.g. TELEVISION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD19HV09_RzV3D1cfV19QtRcPRzUYCJOQYEOAY5hoQG8zCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwMjQwMTE3MLI0djohQBAM0SI4I</recordid><startdate>20210318</startdate><enddate>20210318</enddate><creator>KUMAKI SATOSHI</creator><scope>EVB</scope></search><sort><creationdate>20210318</creationdate><title>IMAGING ELEMENT AND IMAGING APPARATUS</title><author>KUMAKI SATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2021044782A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC COMMUNICATION TECHNIQUE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>PICTORIAL COMMUNICATION, e.g. TELEVISION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KUMAKI SATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KUMAKI SATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>IMAGING ELEMENT AND IMAGING APPARATUS</title><date>2021-03-18</date><risdate>2021</risdate><abstract>To provide an imaging element that can accurately correct dark current irregularities.SOLUTION: In an imaging element, microlenses 400 that focus light are arranged in a matrix consisting of n rows and m columns. An aperture APD (avalanche photodiode) 301 is placed in a light collection area of the microlens 400 as a photoelectric conversion unit. A light-shielding APD 302 is placed in a gap of the aperture APD 301 and outside the light collection area of the microlens 400. A light-shielding layer 401 is placed on an upper side of the light-shielding APD 302.SELECTED DRAWING: Figure 4
【課題】暗電流ムラを精度よく補正可能な撮像素子を提供する。【解決手段】撮像素子には、光を集光するマイクロレンズ４００がｎ行ｍ列からなるマトリクス状に配置されている。マイクロレンズ４００の集光領域内に、光電変換部として開口ＡＰＤ（アバランシェフォトダイオード）３０１が配置されている。開口ＡＰＤ３０１の隙間であって、マイクロレンズ４００の集光領域外に遮光ＡＰＤ３０２が配置される。遮光ＡＰＤ３０２の上側には遮光層４０１が配置される。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES |
| title | IMAGING ELEMENT AND IMAGING APPARATUS |
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