FORMATION METHOD OF METAL PLATING FILM
To provide a method of forming a metal plating film having a thick film thickness by a solid phase method.SOLUTION: A method of forming a metal plating film of a first metal and a second metal having an ionization tendency larger than that of the first metal according to the invention includes a fir...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide a method of forming a metal plating film having a thick film thickness by a solid phase method.SOLUTION: A method of forming a metal plating film of a first metal and a second metal having an ionization tendency larger than that of the first metal according to the invention includes a first step where a second metal plating film is formed by precipitating the second metal on a surface of a copper substrate, and a second step where a first metal plating film is formed by precipitating the first metal on a surface of the second metal by a solid phase electroless plating method. The solid phase electroless plating method in the second step is performed using a laminated composite containing: a substitution type electroless plating bath containing a first metal ion; a solid electrolyte membrane; the copper substrate with the second metal plated thereon; a third metal having an ionization tendency larger than that of the second metal; a second substitution type electroless plating bath containing the first metal ion; and an insulating polymer.SELECTED DRAWING: Figure 6
【課題】固相法により厚い膜厚を有する金属めっき皮膜を形成する方法を提供する。【解決手段】本発明は、第1の金属及び第1の金属よりもイオン化傾向が大きい第2の金属の金属めっき皮膜を形成する方法であって、第2の金属を銅基材の表面上に析出させて第2の金属のめっき皮膜を形成する第1の工程、及び第1の金属を固相無電解めっき法により第2の金属の表面上に析出させて第1の金属のめっき皮膜を形成する第2の工程を含み、第2の工程における固相無電解めっき法を、第1の金属のイオンを含む第1の置換型無電解めっき浴と、固体電解質膜と、第2の金属がめっきされた銅基材と、第2の金属よりもイオン化傾向が大きい第3の金属と、第1の金属のイオンを含む第2の置換型無電解めっき浴と、絶縁性高分子とを含む積層複合体を用いて実施する、方法に関する。【選択図】図6 |
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