DEVELOPMENT PROCESSING METHOD AND DEVELOPMENT PROCESSING DEVICE

To reduce the number of defects when a resist film having a large angle of contact to water is formed.SOLUTION: Provided is a development processing method for processing a resist film on a substrate to develop, including: a step (A) for supplying a developer to the substrate to develop the resist film and forming a resist pattern; a step (B) for supplying a water-based cleaning liquid to the substrate having been developed and cleaning the substrate with the water-based cleaning liquid; a step (C) for applying an aqueous solution of water-soluble polymer to the substrate having been cleaned with the water-based cleaning liquid and forming a hydrophilic layer having hydrophilicity on the surface of the substrate; a step (D) for cleaning the substrate having had the hydrophilic layer formed thereon with a rinse liquid. The step (B) includes a step (a) for accelerating the number of revolutions of the substrate and a step (b) for decelerating the number of revolutions of the substrate for a while before the step (C) is started after the step (a), the degree of deceleration in the step (b) being smaller than the degree of acceleration in the step (a).SELECTED DRAWING: Figure 4 【課題】水に対する接触角の大きいレジスト膜を形成した場合の欠陥数を低減させる。【解決手段】基板上のレジスト膜を現像処理する現像処理方法であって、（Ａ）前記基板に現像液を供給して前記レジスト膜を現像してレジストパターンを形成する工程と、（Ｂ）現像された前記基板に水系洗浄液を供給して、当該水系洗浄液で当該基板を洗浄する工程と、（Ｃ）前記水系洗浄液で洗浄された前記基板に、水溶性ポリマーの水溶液を塗布し、前記基板の表面に親水性を有する親水性層を形成する工程と、（Ｄ）前記親水性層が形成された基板を、リンス液で洗浄する工程と、を含み、前記（Ｂ）工程は、（ａ）前記基板の回転数を加速させていく工程と、（ｂ）前記（ａ）工程後、前記（Ｃ）工程が開始されるまでの間、前記基板の回転数を減速させていく工程と、を含み、前記（ｂ）工程における減速度が、前記（ａ）工程における加速度よりも小さい。【選択図】図４