SEMICONDUCTOR DEVICE

To reduce a variation ΔVth in threshold voltage in a thin-film transistor (TFT) formed of an oxide semiconductor.SOLUTION: A semiconductor device has a TFT formed of an oxide semiconductor. The oxide semiconductor has a channel area 104, a source area 1042, a drain area 1043, and an LDD (lightly dop...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HANADA AKIHIRO, KAITO TAKUO, TSUBUKI MASASHI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
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