SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

To provide a semiconductor device and a semiconductor device manufacturing method, with which it is possible to suppress occurrence of peeling of a back metal film from a semiconductor substrate accompanying chipping.SOLUTION: A semiconductor device 10 comprises a semiconductor element 1, a semiconductor substrate 2, and a back metal film 3. The second semiconductor substrate 2 includes a first surface 21, on which the semiconductor element 1 is arranged, and a second surface 22. The second surface 22 includes a first part 221 and a second part 222. The back metal film 3 includes: a first film part 31 that covers the first part 221; and a second film part 32 that covers the second part 222 and is adjacent to the first film part 31. The second film part 32 includes a recessed part 321 and a projecting part 322 that is adjacent to the recessed part 321. The recessed part 321 is recessed with respect to the first film part 31 in a direction from the second surface 22 toward the first surface 21. The projecting part 322 reaches a height position of the first film part 31 in a direction from the first surface 31 toward the second surface 32.SELECTED DRAWING: Figure 3 【課題】半導体基板にチッピングに伴うバックメタル膜の剥がれが発生することを抑制できる半導体装置および半導体装置の製造方法を提供する。【解決手段】半導体装置１０は、半導体素子１と、半導体基板２と、バックメタル膜３とを備えている。半導体基板２は、半導体素子１が配置された第１面２１と、第２面２２とを含んでいる。第２面２２は、第１部２２１と、第２部２２２とを含んでいる。バックメタル膜３は、第１部２２１を覆う第１膜部３１と、第２部２２２を覆いかつ第１膜部３１と隣り合う第２膜部３２とを含んでいる。第２膜部３２は、凹部３２１と、凹部３２１と隣り合う凸部３２２とを含んでいる。凹部３２１は、第２面２２から第１面２１に向かう方向に第１膜部３１よりも凹んでいる。凸部３２２は、第１面３１から第２面３２に向かう方向に第１膜部３１の高さ位置に達している。【選択図】図３