WAFER PROCESSING METHOD
To decrease, when processing stuck wafers with a cavity in a sticking surface thereof to expose the cavity, roughness formed around the cavity.SOLUTION: A wafer processing method in which stuck wafers W having a cavity W1d in a sticking surface W1a in which two wafers W1, W2 are stuck together are g...
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Zusammenfassung: | To decrease, when processing stuck wafers with a cavity in a sticking surface thereof to expose the cavity, roughness formed around the cavity.SOLUTION: A wafer processing method in which stuck wafers W having a cavity W1d in a sticking surface W1a in which two wafers W1, W2 are stuck together are ground to expose the cavity W1d, comprises: a holding step in which the stuck wafers W are held on a chuck table 3; a grinding step in which the stuck wafers W held on the chuck table 3 are ground by a grind stone and grinding is stopped immediately before the cavity W1d is exposed; and a polishing step in which, after the grinding step, a ground surface W1b of the stuck wafers W is polished with slurry and a polishing pad 76 to expose the cavity W1d.SELECTED DRAWING: Figure 3
【課題】貼り合わせ面に空洞を有する貼り合わせウェーハを加工して空洞を露出させる場合に、空洞の周囲に形成される凸凹を小さくする。【解決手段】2枚のウェーハW1、W2を貼り合わせた貼り合わせ面W1aに空洞W1dを有する貼り合わせウェーハWを研削して空洞W1dを露出させるウェーハの加工方法であって、貼り合わせウェーハWをチャックテーブル3に保持させる保持工程と、チャックテーブル3に保持された貼り合わせウェーハWを研削砥石で研削し空洞W1dが露出する直前で研削を停止させる研削工程と、研削工程後に、貼り合わせウェーハWの被研削面W1bをスラリーと研磨パッド76とで研磨し空洞W1dを露出させる研磨工程と、を備えるウェーハの加工方法。【選択図】図3 |
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