SEMICONDUCTOR INTEGRATED CIRCUIT

To provide a semiconductor integrated circuit capable of improving voltage-withstanding with a simple configuration.SOLUTION: The semiconductor integrated circuit includes: a substrate 12; an embedded insulator film 14 provided on the substrate 12; a p-type impurity region 16 formed on the embedded insulator film 14; and an n-type impurity region 18 formed in the p-type impurity region 16. A potential of the substrate 12 is made into a potential between a potential of the p-type impurity region 16 and a potential of the n-type impurity region 18.SELECTED DRAWING: Figure 2 【課題】簡易な構成で耐圧を向上させることが可能な半導体集積回路を提供すること。【解決手段】基板１２と、基板１２上に設けられた埋め込み絶縁膜１４と、埋め込み絶縁膜１４上に形成されたＰ型不純物領域１６と、Ｐ型不純物領域１６内に形成されたＮ型不純物領域１８と、を含み、基板１２の電位が、Ｐ型不純物領域１６の電位とＮ型不純物領域１８の電位の間の電位とされている。【選択図】図２