NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

To provide a technique capable of forming a high withstand voltage nitride semiconductor device.SOLUTION: A nitride semiconductor device includes a p-type layer that is arranged on the upper surface of an n-type layer and formed by epitaxial growth. The nitride semiconductor device includes an n-typ...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AOI SACHIKO, IGUCHI HIROKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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