NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

To provide a technique capable of forming a high withstand voltage nitride semiconductor device.SOLUTION: A nitride semiconductor device includes a p-type layer that is arranged on the upper surface of an n-type layer and formed by epitaxial growth. The nitride semiconductor device includes an n-typ...

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Bibliographische Detailangaben
Hauptverfasser:	AOI SACHIKO, IGUCHI HIROKO
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	To provide a technique capable of forming a high withstand voltage nitride semiconductor device.SOLUTION: A nitride semiconductor device includes a p-type layer that is arranged on the upper surface of an n-type layer and formed by epitaxial growth. The nitride semiconductor device includes an n-type side surface region that is arranged on the entire side surface of the p-type layer and formed by ion implantation. The n-type side region covers the end of the junction interface between the n-type layer and the p-type layer.SELECTED DRAWING: Figure 1 【課題】高耐圧の窒化物半導体装置を形成することができる技術を提供する。【解決手段】窒化物半導体装置は、ｎ型層の上面に配置されており、エピタキシャル成長により形成されているｐ型層を備える。窒化物半導体装置は、ｐ型層の側面の全面に配置されており、イオン注入により形成されているｎ型側面領域を備える。ｎ型側面領域によって、ｎ型層とｐ型層との接合界面の端部が覆われている。【選択図】図１