MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

To provide a manufacturing method that, even when a semiconductor layer including a concave part on a surface is transferred to a supporting substrate, can suppress the generation of a cavity in a bonded part.SOLUTION: The manufacturing method includes: a step of preparing a first member including a first substrate, a semiconductor layer provided on the first substrate and including a first concave part on a surface, and a first metal layer provided over the surface of the semiconductor layer excluding at least the first concave part, the first member including a second concave part on a surface in a region including right above the first concave part; a step of preparing a second member including a second substrate, a second metal layer provided on the second substrate, a third metal layer provided on the second metal layer, and a fourth metal layer provided on the third metal layer; a step of heating with the first metal layer and the fourth metal layer facing each other so as to make the first metal layer, the fourth metal layer, and the second metal layer diffuse mutually to become alloy, thereby bonding the first member and the second member. The third metal layer is a layer suppressing the mutual diffusion between the second metal layer and the fourth metal layer.SELECTED DRAWING: Figure 7 【課題】表面に凹部を有する半導体層を支持基板に転写する場合であっても、接合部分における空洞の発生を抑制できる製造方法を提供する。【解決手段】第１基板と、第１基板上に設けられ表面に第１凹部を含む半導体層と、半導体層の表面のうち少なくとも第１凹部を除く表面の上方に設けられた第１金属層と、を備えており、表面に第２凹部を第１凹部の直上を含む領域に有する第１部材を準備する工程と、第２基板と、第２基板上に設けられた第２金属層と、第２金属層上に設けられた第３金属層と、第３金属層上に設けられた第４金属層と、を備えた第２部材を準備する工程と、第１金属層と第４金属層とを対向させ加熱し、第１金属層及び第４金属層と第２金属層とを相互拡散させ合金化することにより、第１部材と第２部材とを接合する工程と、を含み、第３金属層は、第２金属層と前記第４金属層との相互拡散を抑制する層である。【選択図】図７