APPARATUS AND METHOD FOR GROWING CRYSTAL

To absorb stress due to a difference between the physical properties of an SiC seed substrate and a graphite base and improve the crystal quality of a grown SiC single crystal.SOLUTION: An apparatus 1 for growing a crystal, capable of growing a SiC crystal on a SiC seed substrate 4 by heating and sublimating a SiC raw material 5 by a sublimation method, comprises: graphite growth vessels 3 and 4 consisting of a main body 2 for storing the SiC raw material 5 and a lid body 3 served as a base for bonding the SiC seed substrate 4 and attached to the upper part of the main body 2 in the state of the SiC seed substrate 4 facing inward; a thermal insulation material 6 surrounding the growth vessels 3 and 4; and a heater 7 for heating the SiC raw material 5. When setting the thickness of the SiC seed substrate 4 to t1 and the thickness of the base to t2, t2/t1 is less than 5.SELECTED DRAWING: Figure 1 【課題】ＳｉＣ種基板とグラファイト製の土台との物性差による応力を吸収し、成長したＳｉＣ単結晶の結晶品質の向上を図る。【解決手段】昇華法によりＳｉＣ原料５を加熱して昇華させることでＳｉＣ種基板４上にＳｉＣを結晶成長させる結晶成長装置１であって、ＳｉＣ原料５を収容する本体２と、ＳｉＣ種基板４を貼り付ける土台を兼ねるとともにＳｉＣ種基板４が内側を向いた状態で本体２の上部に取り付けられる蓋体３とからなるグラファイト製の成長容器３，４と、成長容器３，４を取り囲む断熱材６と、ＳｉＣ原料５を加熱するヒータ７とを備え、ＳｉＣ種基板４の厚みをｔ１とし、土台の厚みをｔ２とした場合に、ｔ２／ｔ１が５未満であることを特徴とする結晶成長装置。【選択図】図１