PLASMA ENHANCED ANNEALING CHAMBER FOR WAFER GAS DISCHARGE

To provide an improved plasma enhanced annealing chamber for substrate outgassing.SOLUTION: A dual chamber heat treatment device 100 includes heat treatment chambers 102 and 104 that define processing spaces 110 and 112. Substrate supports 106 and 198 are arranged in a processing space. One or more...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NORMAN L TAM, LARA HAWRYLCHAK, IU DONGMING, MATTHEW SPULLER, STEPHEN MOFFATT, MATTHEW D SCOTNEY-CASTLE, CHAN KONG LUNG SAMUEL
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	To provide an improved plasma enhanced annealing chamber for substrate outgassing.SOLUTION: A dual chamber heat treatment device 100 includes heat treatment chambers 102 and 104 that define processing spaces 110 and 112. Substrate supports 106 and 198 are arranged in a processing space. One or more remote plasma sources 126 and 132 communicate fluidly with the processing spaces. The remote plasma sources supply cleaning plasma to the processing spaces.SELECTED DRAWING: Figure 1 【課題】基板ガス放出のための改良されたプラズマエンハンストアニールチャンバを提供する。【解決手段】デュアルチャンバ熱処理装置１００は、処理空間１１０、１１２を画定する熱処理チャンバ１０２、１０４を含む。基板支持体１０６、１９８は、処理空間内に配設される。一又は複数の遠隔プラズマ源１２６、１３２は、処理空間と流体連通する。遠隔プラズマ源は、処理空間に洗浄プラズマを供給する。【選択図】図１