FILM FORMATION METHOD AND FILM FORMATION DEVICE

To control the reactivity of gas.SOLUTION: A film forming method includes the steps of irradiating a processing container in which a substrate for film formation is arranged with ultraviolet rays of a first wavelength that separates a predetermined bond of raw material gas and adsorbing a precursor...

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Bibliographische Detailangaben
Hauptverfasser:	ITABASHI MASARU, AIDA MICHITAKA, IFUKU RYOTA, KATO TAKAAKI, YAMADA KAZUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To control the reactivity of gas.SOLUTION: A film forming method includes the steps of irradiating a processing container in which a substrate for film formation is arranged with ultraviolet rays of a first wavelength that separates a predetermined bond of raw material gas and adsorbing a precursor of the raw material gas on the surface of the substrate while supplying the raw material gas for film formation into the processing container, and supplying reaction gas into the processing container to form a layer in which the precursor and the reaction gas react on the surface of the substrate.SELECTED DRAWING: Figure 2 【課題】ガスの反応性を制御すること。【解決手段】成膜方法は、成膜対象の基板が配置された処理容器内に成膜用の原料ガスを供給しつつ、原料ガスが有する所定の結合を分離する第１波長の紫外線を処理容器内に照射して、基板の表面に原料ガスの前駆体を吸着する工程と、処理容器内に反応ガスを供給して基板の表面に前駆体と反応ガスとが反応した層を形成する工程と、を有する。【選択図】図２