SEMICONDUCTOR DEVICE
To provide a semiconductor device that can suppress an increase in physique while improving the output.SOLUTION: A semiconductor device 20 includes a heat dissipation member 40, and a plurality of switching elements 50 in which one of main electrodes is electrically connected to the heat dissipation...
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| creator | YOSHIKAWA SHOTA |
| description | To provide a semiconductor device that can suppress an increase in physique while improving the output.SOLUTION: A semiconductor device 20 includes a heat dissipation member 40, and a plurality of switching elements 50 in which one of main electrodes is electrically connected to the heat dissipation member and which are connected in parallel with each other. The switching element includes a first switching element 51 formed on a Si substrate and a second switching element 52 formed on the SiC substrate. The first switching element and the second switching element are driven on at least for periods of time different from each other. The switching element includes at least a plurality of first switching elements or a plurality of second switching elements, and the first switching elements and the second switching elements are alternately arranged in an X direction.SELECTED DRAWING: Figure 4
【課題】出力を向上しつつ体格の増大を抑制できる半導体装置を提供すること。【解決手段】半導体装置２０は、放熱部材４０と、主電極のひとつが放熱部材に電気的に接続されて互いに並列接続された複数のスイッチング素子５０を備えている。スイッチング素子は、Ｓｉ基板に形成された第１スイッチング素子５１と、ＳｉＣ基板に形成された第２スイッチング素子５２を含んでいる。第１スイッチング素子及び第２スイッチング素子は、少なくとも互いに異なる期間においてオン駆動する。スイッチング素子は、第１スイッチング素子及び第２スイッチング素子の少なくとも一方を複数含んでおり、第１スイッチング素子及び第２スイッチング素子が、Ｘ方向において交互に配置されている。【選択図】図４ |
| format | Patent |
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【課題】出力を向上しつつ体格の増大を抑制できる半導体装置を提供すること。【解決手段】半導体装置２０は、放熱部材４０と、主電極のひとつが放熱部材に電気的に接続されて互いに並列接続された複数のスイッチング素子５０を備えている。スイッチング素子は、Ｓｉ基板に形成された第１スイッチング素子５１と、ＳｉＣ基板に形成された第２スイッチング素子５２を含んでいる。第１スイッチング素子及び第２スイッチング素子は、少なくとも互いに異なる期間においてオン駆動する。スイッチング素子は、第１スイッチング素子及び第２スイッチング素子の少なくとも一方を複数含んでおり、第１スイッチング素子及び第２スイッチング素子が、Ｘ方向において交互に配置されている。【選択図】図４</description><language>eng ; jpn</language><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS ; BASIC ELECTRIC ELEMENTS ; CONTROL OR REGULATION THEREOF ; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER ; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERATION ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201015&DB=EPODOC&CC=JP&NR=2020170824A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76419</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201015&DB=EPODOC&CC=JP&NR=2020170824A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHIKAWA SHOTA</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor device that can suppress an increase in physique while improving the output.SOLUTION: A semiconductor device 20 includes a heat dissipation member 40, and a plurality of switching elements 50 in which one of main electrodes is electrically connected to the heat dissipation member and which are connected in parallel with each other. The switching element includes a first switching element 51 formed on a Si substrate and a second switching element 52 formed on the SiC substrate. The first switching element and the second switching element are driven on at least for periods of time different from each other. The switching element includes at least a plurality of first switching elements or a plurality of second switching elements, and the first switching elements and the second switching elements are alternately arranged in an X direction.SELECTED DRAWING: Figure 4
【課題】出力を向上しつつ体格の増大を抑制できる半導体装置を提供すること。【解決手段】半導体装置２０は、放熱部材４０と、主電極のひとつが放熱部材に電気的に接続されて互いに並列接続された複数のスイッチング素子５０を備えている。スイッチング素子は、Ｓｉ基板に形成された第１スイッチング素子５１と、ＳｉＣ基板に形成された第２スイッチング素子５２を含んでいる。第１スイッチング素子及び第２スイッチング素子は、少なくとも互いに異なる期間においてオン駆動する。スイッチング素子は、第１スイッチング素子及び第２スイッチング素子の少なくとも一方を複数含んでおり、第１スイッチング素子及び第２スイッチング素子が、Ｘ方向において交互に配置されている。【選択図】図４</description><subject>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CONTROL OR REGULATION THEREOF</subject><subject>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</subject><subject>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERATION</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRgaG5gYWRiaOxkQpAgC8Qh8S</recordid><startdate>20201015</startdate><enddate>20201015</enddate><creator>YOSHIKAWA SHOTA</creator><scope>EVB</scope></search><sort><creationdate>20201015</creationdate><title>SEMICONDUCTOR DEVICE</title><author>YOSHIKAWA SHOTA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020170824A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CONTROL OR REGULATION THEREOF</topic><topic>CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER</topic><topic>CONVERSION OR DISTRIBUTION OF ELECTRIC POWER</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERATION</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHIKAWA SHOTA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHIKAWA SHOTA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2020-10-15</date><risdate>2020</risdate><abstract>To provide a semiconductor device that can suppress an increase in physique while improving the output.SOLUTION: A semiconductor device 20 includes a heat dissipation member 40, and a plurality of switching elements 50 in which one of main electrodes is electrically connected to the heat dissipation member and which are connected in parallel with each other. The switching element includes a first switching element 51 formed on a Si substrate and a second switching element 52 formed on the SiC substrate. The first switching element and the second switching element are driven on at least for periods of time different from each other. The switching element includes at least a plurality of first switching elements or a plurality of second switching elements, and the first switching elements and the second switching elements are alternately arranged in an X direction.SELECTED DRAWING: Figure 4
【課題】出力を向上しつつ体格の増大を抑制できる半導体装置を提供すること。【解決手段】半導体装置２０は、放熱部材４０と、主電極のひとつが放熱部材に電気的に接続されて互いに並列接続された複数のスイッチング素子５０を備えている。スイッチング素子は、Ｓｉ基板に形成された第１スイッチング素子５１と、ＳｉＣ基板に形成された第２スイッチング素子５２を含んでいる。第１スイッチング素子及び第２スイッチング素子は、少なくとも互いに異なる期間においてオン駆動する。スイッチング素子は、第１スイッチング素子及び第２スイッチング素子の少なくとも一方を複数含んでおり、第１スイッチング素子及び第２スイッチング素子が、Ｘ方向において交互に配置されている。【選択図】図４</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
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