FILM DEPOSITION METHOD

To provide a film deposition method capable of depositing a predetermined metal oxide film on an entire substrate surface in a good in-plane uniformity of a film quality distribution.SOLUTION: A film deposition method includes steps where a plurality of targets 51a-51n are faced a substrate Sw in a...

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Bibliographische Detailangaben
Hauptverfasser: TAKI AKIRA, ISHIBASHI SATORU
Format: Patent
Sprache:eng ; jpn
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Beschreibung
Zusammenfassung:To provide a film deposition method capable of depositing a predetermined metal oxide film on an entire substrate surface in a good in-plane uniformity of a film quality distribution.SOLUTION: A film deposition method includes steps where a plurality of targets 51a-51n are faced a substrate Sw in a vacuum film deposition chamber 10 and arranged side by side along one direction at a predetermined step, steps where sputtering gas is introduced to within the vacuum film deposition chamber, and steps where a metal oxide film is deposited on a substrate surface by applying a power to each target to sputter each target. The substrate is reciprocated to the target in an X-axis direction at a predetermined stroke Sk when the side by side direction is the X-axis and a film is deposited by sputtering, the stroke being set to two times or more of a center to center distance between adjacent targets.SELECTED DRAWING: Figure 1 【課題】基板全面に亘って膜質分布の面内均一性よく所定の金属酸化物膜を成膜できる成膜方法を提供する。【解決手段】真空成膜室10内で基板Swに対向させて、複数枚のターゲット51a〜51nを一方向に沿って所定間隔で並設し、真空成膜室内にスパッタガスを導入し、各ターゲットに電力投入して各ターゲットをスパッタリングすることで基板表面に金属酸化物膜を成膜する成膜方法は、ターゲットの並設方向をX軸方向として、スパッタリングによる成膜中、ターゲットに対して基板をX軸方向に所定のストロークStで相対往復動させ、ストロークは、隣接するターゲットの中心間距離Dtの2倍以上となるように設定される。【選択図】図1