SEMICONDUCTOR STORAGE DEVICE

To provide a high-quality semiconductor storage device.SOLUTION: A semiconductor storage device of an embodiment comprises: a plurality of first conductor layers laminated in a first direction, each containing tungsten; a plurality insulation films including a plurality of lamination parts alternately laminated with the plurality of first conductor layers and a first protrusion protruding in a second direction orthogonal to the first direction with respect to the lamination parts; a semiconductor layer extending in the first direction in the laminate between the plurality of lamination parts and the plurality of first conductor layers; a charge storage layer arranged between the plurality of first conductor layers and the semiconductor layer; a plurality of second conductor layers arranged in contact with the first conductor layers on the first protrusion in the insulation films and including a silicon containing an impurity; and a plurality of contact plugs provided in contact with one second conductor on one second conductor layer among the plurality of second conductor layers, having conductivity, and extending in the first direction.SELECTED DRAWING: Figure 7 【課題】高品質な半導体記憶装置を提供する。【解決手段】実施形態の半導体記憶装置は、第１方向に積層された、それぞれタングステンを含む複数の第１導電体層と、前記複数の第１導電体層と交互に積層される積層部と、前記積層部に対して前記第１方向に直交する第２方向に突出する第１突出部とを含む複数の絶縁膜と、複数の前記積層部と前記複数の第１導電体層との積層体内を前記第１方向に延びる半導体層と、前記複数の第１導電体層と前記半導体層との間に配置される電荷蓄積層と、前記絶縁膜における前記第１突出部の上において前記第１導電体層に接して配置され、不純物を含むシリコンを有する複数の第２導電体層と、前記複数の第２導電体層のうちの１の第２導電体層の上に前記１の第２導電体に接して設けられ、導電性を有し、前記第１方向に延びる複数のコンタクトプラグと、を備える。【選択図】図７