SEMICONDUCTOR DEVICE

To provide a semiconductor device including a p-channel MOS transistor that can suppress junction leakage.SOLUTION: In a semiconductor device, a transistor 10 includes n-type impurity regions 12a and 12b that are disposed away from each other in an n-type silicon semiconductor layer 100, p-type impu...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: UECHI TADAYOSHI, IZUMIDA TAKASHI, SHIMANE TAKESHI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
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