SEMICONDUCTOR STORAGE DEVICE

To provide a semiconductor storage device capable of achieving higher integration and higher speed.SOLUTION: A semiconductor storage device according to one embodiment comprises: a substrate; a plurality of gate electrodes arranged in a first direction crossing a surface of the substrate; a first semiconductor layer extending in the first direction and facing the plurality of gate electrodes; a gate insulation film provided between the gate electrode and the first semiconductor layer; a second semiconductor layer provided on a substrate side of the plurality of gate electrodes and connected to a side surface in a second direction crossing the first direction of the first semiconductor layer; and a first contact extending in the first direction and connected to the second semiconductor layer. The second semiconductor layer comprises: a first region connected to the side surface in the second direction of the first semiconductor layer and containing a P-type impurity; and a first contact region connected to the first contact and having larger N-type impurity concentration than that in the first region.SELECTED DRAWING: Figure 6 【課題】高集積化及び高速化の可能な半導体記憶装置を提供する。【解決手段】一の実施形態に係る半導体記憶装置は、基板と、基板の表面と交差する第１方向に並ぶ複数のゲート電極と、第１方向に延伸して複数のゲート電極と対向する第１半導体層と、ゲート電極及び第１半導体層の間に設けられたゲート絶縁膜と、複数のゲート電極よりも基板側に設けられ、第１半導体層の第１方向と交差する第２方向の側面に接続された第２半導体層と、第１方向に延伸し、第２半導体層に接続された第１コンタクトと、を備える。第２半導体層は、第１半導体層の第２方向の側面に接続され、Ｐ型の不純物を含む第１領域と、第１コンタクトに接続され、第１領域よりもＮ型の不純物の濃度が大きい第１コンタクト領域と、を備える。【選択図】図６