APPARATUS AND METHOD FOR REPAIRING PHOTOLITHOGRAPHIC MASK

To provide an apparatus for processing a photolithographic mask.SOLUTION: The apparatus comprises: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or local etching reaction on the photolithographic mask; (b) at least one first means for providing at...

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Bibliographische Detailangaben
Hauptverfasser:	MICHAEL BUDACH, HOINKIS OTTMAR
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY GAMMA RAY OR X-RAY MICROSCOPES HOLOGRAPHY IRRADIATION DEVICES MATERIALS THEREFOR NUCLEAR ENGINEERING NUCLEAR PHYSICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR
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Beschreibung
Zusammenfassung:	To provide an apparatus for processing a photolithographic mask.SOLUTION: The apparatus comprises: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, where the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (φ) between the time-varying particle beam and a surface of the photolithographic mask.SELECTED DRAWING: Figure 8 【課題】本出願は、フォトリソグラフィマスクを処理するための装置に関する。【解決手段】上記装置は、（ａ）フォトリソグラフィマスク上の局所堆積反応および／または局所エッチング反応のために具現化された少なくとも１つの時間変化する粒子ビームと、（ｂ）少なくとも１つの前駆体ガスを提供するための少なくとも１つの第１の手段であって、前駆体ガスが、局所堆積反応および／または局所エッチング反応の間に粒子ビームと相互作用するように具現化された少なくとも１つの第１の手段と、（ｃ）時間変化する粒子ビームとフォトリソグラフィマスクの表面との間の平均入射角（φ）を減少させる少なくとも１つの第２の手段と、を備える。【選択図】図８