CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND FILM DEPOSITION METHOD
To provide a cathode unit for a magnetron sputtering device capable of freely changing an action region of a stray magnetic field to a target surface, and uniformly eroding a sputtering face across its almost entire surface, and a film deposition method.SOLUTION: A cathode unit CU for a magnetron sp...
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| description | To provide a cathode unit for a magnetron sputtering device capable of freely changing an action region of a stray magnetic field to a target surface, and uniformly eroding a sputtering face across its almost entire surface, and a film deposition method.SOLUTION: A cathode unit CU for a magnetron sputtering device Sm is arranged on a side opposite to a sputtering face 41 of a target Tg having a rectangular profile, and comprises a magnet unit Mu for applying a stray magnetic field to a sputtering face side of the target. The magnet unit comprises: an electromagnet 8 provided in a region equal to or greater than the target, and formed by winding a coil 82 around a magnetic core 81; and a power source Ps that can conduct a current to coils of respective electromagnets respectively, and in which a direction of a conducting current is variable.SELECTED DRAWING: Figure 1
【課題】ターゲット表面への漏洩磁場の作用領域を自在に変更できて、スパッタ面をその略全面に亘って均等に侵食できるようにしたマグネトロンスパッタリング装置用のカソードユニット及び成膜方法を提供する。【解決手段】ターゲットＴｇのスパッタ面４１と背向する側に配置されて、ターゲットのスパッタ面側に漏洩磁場を作用させる磁石ユニットＭｕを備える本発明のマグネトロンスパッタリング装置Ｓｍ用のカソードユニットＣＵは、磁石ユニットが、ターゲットと同等以上の領域に設けられる、磁心８１にコイル８２を巻回してなる電磁石８と、各電磁石のコイルに対して夫々通電可能で且つ通電電流の向きが可変の電源Ｐｓとを備える。【選択図】図１ |
| format | Patent |
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【課題】ターゲット表面への漏洩磁場の作用領域を自在に変更できて、スパッタ面をその略全面に亘って均等に侵食できるようにしたマグネトロンスパッタリング装置用のカソードユニット及び成膜方法を提供する。【解決手段】ターゲットＴｇのスパッタ面４１と背向する側に配置されて、ターゲットのスパッタ面側に漏洩磁場を作用させる磁石ユニットＭｕを備える本発明のマグネトロンスパッタリング装置Ｓｍ用のカソードユニットＣＵは、磁石ユニットが、ターゲットと同等以上の領域に設けられる、磁心８１にコイル８２を巻回してなる電磁石８と、各電磁石のコイルに対して夫々通電可能で且つ通電電流の向きが可変の電源Ｐｓとを備える。【選択図】図１</description><language>eng ; jpn</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200903&DB=EPODOC&CC=JP&NR=2020139213A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200903&DB=EPODOC&CC=JP&NR=2020139213A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKUBO HIROO</creatorcontrib><title>CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND FILM DEPOSITION METHOD</title><description>To provide a cathode unit for a magnetron sputtering device capable of freely changing an action region of a stray magnetic field to a target surface, and uniformly eroding a sputtering face across its almost entire surface, and a film deposition method.SOLUTION: A cathode unit CU for a magnetron sputtering device Sm is arranged on a side opposite to a sputtering face 41 of a target Tg having a rectangular profile, and comprises a magnet unit Mu for applying a stray magnetic field to a sputtering face side of the target. The magnet unit comprises: an electromagnet 8 provided in a region equal to or greater than the target, and formed by winding a coil 82 around a magnetic core 81; and a power source Ps that can conduct a current to coils of respective electromagnets respectively, and in which a direction of a conducting current is variable.SELECTED DRAWING: Figure 1
【課題】ターゲット表面への漏洩磁場の作用領域を自在に変更できて、スパッタ面をその略全面に亘って均等に侵食できるようにしたマグネトロンスパッタリング装置用のカソードユニット及び成膜方法を提供する。【解決手段】ターゲットＴｇのスパッタ面４１と背向する側に配置されて、ターゲットのスパッタ面側に漏洩磁場を作用させる磁石ユニットＭｕを備える本発明のマグネトロンスパッタリング装置Ｓｍ用のカソードユニットＣＵは、磁石ユニットが、ターゲットと同等以上の領域に設けられる、磁心８１にコイル８２を巻回してなる電磁石８と、各電磁石のコイルに対して夫々通電可能で且つ通電電流の向きが可変の電源Ｐｓとを備える。【選択図】図１</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPBwdgzx8HdxVQj18wxRcPMPUvB1dPdzDQny91MIDggNCXEN8vRzV3BxDfN0dtVRcPRzUXDz9PEFCgT4B3uGeAKV-bqCTOBhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRgaGxpZGhsaOxkQpAgBUhy0m</recordid><startdate>20200903</startdate><enddate>20200903</enddate><creator>OKUBO HIROO</creator><scope>EVB</scope></search><sort><creationdate>20200903</creationdate><title>CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND FILM DEPOSITION METHOD</title><author>OKUBO HIROO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020139213A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>OKUBO HIROO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKUBO HIROO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND FILM DEPOSITION METHOD</title><date>2020-09-03</date><risdate>2020</risdate><abstract>To provide a cathode unit for a magnetron sputtering device capable of freely changing an action region of a stray magnetic field to a target surface, and uniformly eroding a sputtering face across its almost entire surface, and a film deposition method.SOLUTION: A cathode unit CU for a magnetron sputtering device Sm is arranged on a side opposite to a sputtering face 41 of a target Tg having a rectangular profile, and comprises a magnet unit Mu for applying a stray magnetic field to a sputtering face side of the target. The magnet unit comprises: an electromagnet 8 provided in a region equal to or greater than the target, and formed by winding a coil 82 around a magnetic core 81; and a power source Ps that can conduct a current to coils of respective electromagnets respectively, and in which a direction of a conducting current is variable.SELECTED DRAWING: Figure 1
【課題】ターゲット表面への漏洩磁場の作用領域を自在に変更できて、スパッタ面をその略全面に亘って均等に侵食できるようにしたマグネトロンスパッタリング装置用のカソードユニット及び成膜方法を提供する。【解決手段】ターゲットＴｇのスパッタ面４１と背向する側に配置されて、ターゲットのスパッタ面側に漏洩磁場を作用させる磁石ユニットＭｕを備える本発明のマグネトロンスパッタリング装置Ｓｍ用のカソードユニットＣＵは、磁石ユニットが、ターゲットと同等以上の領域に設けられる、磁心８１にコイル８２を巻回してなる電磁石８と、各電磁石のコイルに対して夫々通電可能で且つ通電電流の向きが可変の電源Ｐｓとを備える。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND FILM DEPOSITION METHOD |
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