CATHODE UNIT FOR MAGNETRON SPUTTERING DEVICE, AND FILM DEPOSITION METHOD
To provide a cathode unit for a magnetron sputtering device capable of freely changing an action region of a stray magnetic field to a target surface, and uniformly eroding a sputtering face across its almost entire surface, and a film deposition method.SOLUTION: A cathode unit CU for a magnetron sp...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide a cathode unit for a magnetron sputtering device capable of freely changing an action region of a stray magnetic field to a target surface, and uniformly eroding a sputtering face across its almost entire surface, and a film deposition method.SOLUTION: A cathode unit CU for a magnetron sputtering device Sm is arranged on a side opposite to a sputtering face 41 of a target Tg having a rectangular profile, and comprises a magnet unit Mu for applying a stray magnetic field to a sputtering face side of the target. The magnet unit comprises: an electromagnet 8 provided in a region equal to or greater than the target, and formed by winding a coil 82 around a magnetic core 81; and a power source Ps that can conduct a current to coils of respective electromagnets respectively, and in which a direction of a conducting current is variable.SELECTED DRAWING: Figure 1
【課題】ターゲット表面への漏洩磁場の作用領域を自在に変更できて、スパッタ面をその略全面に亘って均等に侵食できるようにしたマグネトロンスパッタリング装置用のカソードユニット及び成膜方法を提供する。【解決手段】ターゲットTgのスパッタ面41と背向する側に配置されて、ターゲットのスパッタ面側に漏洩磁場を作用させる磁石ユニットMuを備える本発明のマグネトロンスパッタリング装置Sm用のカソードユニットCUは、磁石ユニットが、ターゲットと同等以上の領域に設けられる、磁心81にコイル82を巻回してなる電磁石8と、各電磁石のコイルに対して夫々通電可能で且つ通電電流の向きが可変の電源Psとを備える。【選択図】図1 |
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