SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

To provide a semiconductor device in which dielectric breakdown may hardly occur.SOLUTION: A semiconductor device according to an embodiment comprises: a substrate; a laminated body that includes a conductive layer and an insulating layer which are alternately laminated in a first direction relative to the substrate; a memory film that extends on the laminated body in the first direction and that includes a charge storage layer; a separation part that extends in a second direction being orthogonal to the first direction and that includes an insulation film dividing the laminated body; and an insulation member that extends in a third direction being orthogonal to the first direction and the second direction, and in which area of a top end of the insulation member is wider than area of a top end of the memory film.SELECTED DRAWING: Figure 1 【課題】絶縁破壊が起こりにくい半導体装置を提供する。【解決手段】一実施形態に係る半導体装置は、基板と、基板に対して第１方向に交互に積層された導電層および絶縁層を含む積層体と、積層体を第１方向に延び、電荷蓄積層を含むメモリ膜と、第１方向に直交する第２方向に延び、積層体を分断する絶縁膜を含む分離部と、第１方向および第２方向に直交する第３方向に延び、上端の面積が、メモリ膜の上端の面積よりも広い絶縁部材と、を備える。【選択図】図１