INFRARED ABSORBER AND GAS SENSOR HAVING INFRARED ABSORBER
To provide an infrared absorber which can absorb or radiate infrared rays without increasing the film thickness.SOLUTION: The infrared absorber according to the present invention is an infrared absorber 1 capable of absorbing or radiating infrared rays. An infrared absorber 1 includes: a metal layer...
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Format: | Patent |
Sprache: | eng ; jpn |
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Zusammenfassung: | To provide an infrared absorber which can absorb or radiate infrared rays without increasing the film thickness.SOLUTION: The infrared absorber according to the present invention is an infrared absorber 1 capable of absorbing or radiating infrared rays. An infrared absorber 1 includes: a metal layer 2, which reflects infrared rays; a dielectric layer 3 on the metal layer 2; and a plurality of metal nano-structures 4 on the dielectric layer 3, the metal nano-structures 4 being arranged separately, the dielectric layer 3 having a film thickness of 100nm or smaller and the metal nano-structures 4 having a film thickness of 30nm to 100nm.SELECTED DRAWING: Figure 2
【課題】本発明は、膜厚を大きくすることなく赤外線を吸収または放射することが可能な赤外線吸収体を提供することを目的とする。【解決手段】本発明の赤外線吸収体は、赤外線を吸収または放射することが可能な赤外線吸収体1であって、赤外線吸収体1が、赤外線を反射する金属層2と、金属層2の上層に設けられる誘電体層3と、誘電体層3の上層に互いに間隔を空けて設けられる複数の金属ナノ構造体4とを備え、誘電体層3が、100nm以下の膜厚を有し、金属ナノ構造体4が、30nm〜100nmの膜厚を有することを特徴とする。【選択図】図2 |
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