FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

To provide a film deposition method capable of maintaining a film quality (permittivity) of a dielectric film, and improving deposition speed.SOLUTION: In a film deposition method, which is a film deposition method for forming a dielectric film by a sputtering method, RF is applied from a first powe...

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Bibliographische Detailangaben
Hauptverfasser: TSUYUKI TATSURO, KIMURA ISAO, JINBO TAKETO, KOBAYASHI HIROKI
Format: Patent
Sprache:eng ; jpn
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Zusammenfassung:To provide a film deposition method capable of maintaining a film quality (permittivity) of a dielectric film, and improving deposition speed.SOLUTION: In a film deposition method, which is a film deposition method for forming a dielectric film by a sputtering method, RF is applied from a first power source to a target which is a base material of the dielectric film, and a BST[(Ba,Sr)TiO] film is formed as the dielectric film on a prescribed substrate by using a superposed sputtering method for applying pulse-DC from a second power source.SELECTED DRAWING: Figure 1 【課題】誘電体膜の膜質(誘電率)を維持するとともに、成膜速度の向上が図れる、成膜方法を提供する。【解決手段】本発明に係る成膜方法は、スパッタ法により誘電体膜を形成する成膜方法であって、前記誘電体膜の母材となるターゲットに対して、第一電源からRFを印加するとともに、第二電源からpulse−DCを印加する重畳スパッタ法を用い、所定の基体上に、前記誘電体膜としてBST[(Ba,Sr)TiO3]膜を形成する。【選択図】図1