GaN SINGLE CRYSTAL MANUFACTURING METHOD

To provide a novel method for manufacturing a GaN single crystal having a reduced dislocation density.SOLUTION: A GaN single crystal manufacturing method has a seed preparation step for preparing a single crystal GaN (0001) substrate, and a HVPE step for growing a GaN crystal by HVPE on the (0001) s...

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Bibliographische Detailangaben
1. Verfasser:	ENATSU YUKI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	To provide a novel method for manufacturing a GaN single crystal having a reduced dislocation density.SOLUTION: A GaN single crystal manufacturing method has a seed preparation step for preparing a single crystal GaN (0001) substrate, and a HVPE step for growing a GaN crystal by HVPE on the (0001) surface of the single crystal GaN (0001) substrate. In the HVPE step, after growing a pitted layer, operation for growing a flattened layer is performed by changing a growth condition. A thickness of the pitted layer may be 100 μm or less.SELECTED DRAWING: Figure 2 【課題】低減された転位密度を有するＧａＮ単結晶を製造するための新規な方法を提供する。【解決手段】ＧａＮ単結晶製造方法は、単結晶ＧａＮ（０００１）基板を準備するシード準備工程と、該単結晶ＧａＮ（０００１）基板の（０００１）表面上にＨＶＰＥでＧａＮ結晶を成長させるＨＶＰＥ工程とを有し、該ＨＶＰＥ工程では、ピット化層（pitted layer）を成長させた後、成長条件を変更して平坦化層を成長させる操作が行われる。ピット化層の厚さは１００μｍ以下であってもよい。【選択図】図２