SEMICONDUCTOR DEVICE
To suppress crystal defects (secondary defects) in a semiconductor substrate while sufficiently suppressing the electric field concentration.SOLUTION: A semiconductor device includes an element region provided in a semiconductor substrate, and an electric field relaxation layer that is formed of imp...
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| Zusammenfassung: | To suppress crystal defects (secondary defects) in a semiconductor substrate while sufficiently suppressing the electric field concentration.SOLUTION: A semiconductor device includes an element region provided in a semiconductor substrate, and an electric field relaxation layer that is formed of impurities that are ion-implanted in the semiconductor substrate and that goes around the element region. In this semiconductor device, the electric field relaxation layer has the peak positions of the impurity concentration separated and appearing in at least one of the thickness direction of the semiconductor substrate and the plane orthogonal to the thickness direction.SELECTED DRAWING: Figure 1
【課題】電界集中を十分に抑制しながら、半導体基板内の結晶欠陥（二次欠陥）を抑制する。【解決手段】半導体装置は、半導体基板内に設けられている素子領域と、半導体基板内にイオン注入された不純物により構成されており、素子領域を一巡している電界緩和層を備えている。この半導体装置では、電界緩和層は、半導体基板の厚み方向と厚み方向に直交する面内の少なくとも一方において、不純物濃度のピーク位置が分離して出現している。【選択図】図１ |
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