CERAMIC WIRING BOARD AND METHOD FOR MANUFACTURING THE SAME

To provide a ceramic wiring board which can suppress the formation of a defect in a wiring line even in the case of a wiring line with a small Ni content and a method for manufacturing such a ceramic wiring board.SOLUTION: In a ceramic wiring board 1, a via-hole conducting portion 7 and a surface co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ITO MASANORI, YAMASHITA DAISUKE, INO SHINJIRO, KAGA TAKASHI, KUTSUNA MASAKI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:To provide a ceramic wiring board which can suppress the formation of a defect in a wiring line even in the case of a wiring line with a small Ni content and a method for manufacturing such a ceramic wiring board.SOLUTION: In a ceramic wiring board 1, a via-hole conducting portion 7 and a surface conducting portion 9 contain Mo as a conductive component; the content of Ni in the conductive component is 0.01 wt.% or less. In addition, Mo as a conductive component of the via-hole conducting portion 7 and the surface conducting portion 9 is 0.5 μm or larger and smaller than 1.0 μm in average particle diameter. In other words, Mo serving as a conductive component is very fine, of which the average particle diameter is smaller than 1.0 μm and as such, the via-hole conducting portion 7 and the surface conducting portion 9 are less in defect (cavity) in each wiring line and they are extremely dense.SELECTED DRAWING: Figure 1 【課題】配線中にNiの含有量が少ない場合でも、配線に欠陥が生じることを抑制できるセラミックス配線基板及びその製造方法を提供すること。【解決手段】セラミック配線基板1では、ビア導電部7及び表面導電部9は、導電成分としてMoを含むとともに、導電成分中のNiの含有量が0.01重量%以下である。さらに、ビア導電部7及び表面導電部9の導電成分であるMoの平均粒径は、0.5μm以上1.0μm未満である。つまり、導電成分であるMoの平均粒径は、1.0μm未満と非常に微細であるので、ビア導電部7や表面導電部9には、配線の欠陥(空隙)が少なく、非常に緻密である。【選択図】図1