FILM FORMING APPARATUS AND FILM FORMING METHOD

To suppress unintended entry of impurities into a film to be grown in a film forming apparatus.SOLUTION: The film forming apparatus for growing a film on a surface of a substrate by supplying the surface of the substrate with a mist of a solution has a heating furnace for accommodating and heating t...

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Hauptverfasser:	NISHINAKA HIROYUKI, YOSHIMOTO MASAHIRO, KAWAI FUMIAKI, NAGAOKA TATSUJI
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	To suppress unintended entry of impurities into a film to be grown in a film forming apparatus.SOLUTION: The film forming apparatus for growing a film on a surface of a substrate by supplying the surface of the substrate with a mist of a solution has a heating furnace for accommodating and heating the substrate and a mist supply device for supplying the heating furnace with the mist of the solution. At least a portion of the film forming apparatus exposed to the mist is composed of a material including boron nitride.SELECTED DRAWING: Figure 1 【課題】成膜装置において成長させる膜への意図しない不純物の混入を抑制する。【解決手段】基体の表面に溶液のミストを供給することによって前記基体の前記表面に膜を成長させる成膜装置であって、前記基体を収容して加熱する加熱炉と、前記加熱炉に前記溶液の前記ミストを供給するミスト供給装置と、を有している。前記成膜装置のうちの前記ミストに曝される部分の少なくとも一部が、窒化ホウ素を含む材料により構成されている。【選択図】図１