INFRARED DETECTION ELEMENT

To provide an infrared detection element that improves the infrared absorption rate of an infrared absorption film compared with that in a prior art, and a novel manufacturing method for forming the element.SOLUTION: An infrared absorption film 6 consists of a first metal black film 8 on a membrane, and a second metal black film 9 that has its cluster size larger than that of the first metal black film 8 being a lower layer and a cluster surface density of 1.6/100 μmor more. A method for manufacturing an infrared detection element includes a first deposition step of forming the first metal black film 8; a second deposition step of forming the second metal black film 9 being an upper layer; and a thinning deposition preparation step of exposing, before the second deposition step, a semiconductor substrate after completion of the first deposition step to air different in temperature or humidity from that in the first and second deposition steps. Water may be temporarily added to a formed infrared absorption film to improve adhesion between gold fine particles.SELECTED DRAWING: Figure 2 【課題】赤外線吸収膜の赤外線吸収率を従来より向上させた赤外線検知素子及びこの素子を形成する新規な製造方法を提供する。【解決手段】赤外線吸収膜６は、メンブレン上の第１の金黒膜８と、そのクラスタサイズが下層の第１の金黒膜８よりも大きく、クラスタ平面密度が1.6個／100μｍ2以上である第２の金黒膜９からなる。赤外線検知素子の製造方法は第１の金黒膜８を形成する第１の成膜工程と、上層の第２の金黒膜９を形成する第２の成膜工程と、第２の成膜工程前に、第１の成膜工程終了後の半導体基板を第１及び第２の成膜工程とは温度又は湿度の異なる空気に晒す間引き成膜準備工程とを有している。形成された赤外線吸収膜に対して一時的に水分を加えることによって金の微粒子の相互の密着性を高めても良い。【選択図】 図２