SEMICONDUCTOR DEVICE

To improve the manufacturing quality of a semiconductor device.SOLUTION: A semiconductor device includes a first member, a second member joined via a first solder layer in a first region located on one side of the first member, and a third member joined via a second solder layer in a second region l...

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Bibliographische Detailangaben
Hauptverfasser:	TAKAHAGI SATOSHI, IWASAKI SHINGO, HATASA KEITA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	To improve the manufacturing quality of a semiconductor device.SOLUTION: A semiconductor device includes a first member, a second member joined via a first solder layer in a first region located on one side of the first member, and a third member joined via a second solder layer in a second region located on the same side as the first region of the first member. The first solder layer contains a plurality of supporting particles made of a material having a higher melting point than that of the first solder layer, but the second solder layer does not contain such supporting particles.SELECTED DRAWING: Figure 1 【課題】半導体装置の製造品質を向上する。【解決手段】半導体装置は、第１部材と、第１部材の一方側に位置する第１領域に、第１はんだ層を介して接合された第２部材と、第１部材の第１領域と同じ側に位置する第２領域に、第２はんだ層を介して接合された第３部材とを備える。第１はんだ層には、第１はんだ層よりも高融点の材料で構成された複数の支持粒子が含有されているが、第２はんだ層には、そのような支持粒子は含有されていない。【選択図】図１