PIEZOELECTRIC VIBRATION ELEMENT, PIEZOELECTRIC TRANSDUCER, AND MANUFACTURING METHOD OF THEM

To provide a piezoelectric vibration element capable of suppressing variations of a resonance frequency and achieving stability of a quality, a piezoelectric transducer, a manufacturing method of them, and a manufacturing method of the piezoelectric transducer.SOLUTION: A manufacturing method of a p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KIZU TORU, OI TOMOKI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:To provide a piezoelectric vibration element capable of suppressing variations of a resonance frequency and achieving stability of a quality, a piezoelectric transducer, a manufacturing method of them, and a manufacturing method of the piezoelectric transducer.SOLUTION: A manufacturing method of a piezoelectric vibration element includes: a preparation step of preparing a piezoelectric vibration element 10 having a piezoelectric substrate 11 having a crystal structure that has a first impurity and a second impurity formed by a material different from the first impurity and an excitation electrode 14 provided in both main surfaces of the piezoelectric substrate; and a γ-ray irradiation step of irradiating the piezoelectric vibration element 10 with the γ-ray. The γ-ray irradiation step includes a separation of a coupling between a crystal of the piezoelectric substrate 11 with the first impurity by irradiating the piezoelectric substrate 11 with the γ-ray and the coupling between the crystal in which the coupling with the first impurity is cut with the second impurity.SELECTED DRAWING: Figure 3 【課題】共振周波数のバラツキを抑制し、品質の安定化を図ることができる、圧電振動素子及び圧電振動子並びにこれらの製造方法及び圧電振動子の製造方法を提供する。【解決手段】第1不純物及び第1不純物と異なる材料である第2不純物を含む結晶構造を有する圧電基板11と、圧電基板の両主面のそれぞれに設けられている励振電極14と、を有する圧電振動素子10を準備する準備工程と、圧電振動素子10をγ線で照射するγ線照射工程と、を含み、γ線照射工程は、圧電基板11にγ線を照射することによって圧電基板11の結晶と第1不純物との結合を切り離すことと、第1不純物との結合が切り離された結晶が第2不純物と結合することとを含む。【選択図】 図3