SEMICONDUCTOR DEVICE

To provide a semiconductor device in which a semiconductor element is joined to a heat transfer plate, and provide a technique for improving the heat transfer efficiency from the semiconductor element to the heat transfer plate and ensuring the reliability of the joint portion.SOLUTION: A first protrusion 6 and three or more second protrusions 7 are provided on the surface of a heat transfer plate 4 of a semiconductor device 2 facing a semiconductor element 3. The plurality of second protrusions 7 are arranged so as to surround the first protrusion 6. The heights of the plurality of second protrusions 7 are equal. The tip of the second protrusion is curved so as to bulge outward. The plurality of second protrusions 7 are in contact with the semiconductor element 3. The height of the first protrusion 6 is lower than the height of the second protrusion 7. Since the first protrusion 6 does not contact the semiconductor element 3, the securing of the parallelism of the semiconductor element 3 by the second protrusion 6 is not hindered. The first protrusion 6 narrows a distance between the heat transfer plate 4 and the semiconductor element 3 to improve heat transfer efficiency.SELECTED DRAWING: Figure 4 【課題】本明細書は、半導体素子が伝熱板に接合されている半導体装置に関し、半導体素子から伝熱板への伝熱効率の向上と、接合部分の信頼性確保を両立する技術を提供する。【解決手段】半導体装置２の伝熱板４の半導体素子３との対向面に、第１突起６と３個以上の第２突起７が設けられている。複数の第２突起７は、第１突起６を囲むように配置されている。複数の第２突起７の高さは等しい。第２突起の先端は、外側に膨らむように湾曲している。複数の第２突起７が半導体素子３に接している。第１突起６の高さは第２突起７の高さよりも低い。第１突起６は半導体素子３に接しないので、第２突起６による半導体素子３の平行度の確保を阻害しない。第１突起６は伝熱板４と半導体素子３の距離を狭め、伝熱効率を高める。【選択図】図４