MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE

To suppress fluctuations in electrical characteristics and improve reliability in a semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device having an oxide semiconductor film includes a gate electrode, a gate insulating film on the gate electrode, an oxide semiconduc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: KAMINAGA MASAMI, UBUNAI TOSHIMITSU, KUROSAKI DAISUKE, YAMAZAKI SHUNPEI, HIZUKA JUNICHI, NAKAZAWA YASUTAKA, OKAZAKI KENICHI, SHIMA YUKINORI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!