MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE

To suppress fluctuations in electrical characteristics and improve reliability in a semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device having an oxide semiconductor film includes a gate electrode, a gate insulating film on the gate electrode, an oxide semiconductor film on the gate insulating film, and a pair of electrodes on the oxide semiconductor film, and the oxide semiconductor film includes a channel region, and an n-type region in contact with the pair of electrodes, and the oxygen deficiency in the channel region is smaller than that in an n-type region.SELECTED DRAWING: Figure 1 【課題】酸化物半導体膜を有する半導体装置において、電気特性の変動を抑制すると共に、信頼性を向上させる。【解決手段】酸化物半導体膜を有する半導体装置であって、半導体装置は、ゲート電極と、ゲート電極上のゲート絶縁膜と、ゲート絶縁膜上の酸化物半導体膜と、酸化物半導体膜上の一対の電極と、を有し、酸化物半導体膜は、チャネル領域と、一対の電極と接するｎ型領域と、を有し、チャネル領域の酸素欠損は、ｎ型領域の酸素欠損よりも少ない。【選択図】図１