MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE
To suppress fluctuations in electrical characteristics and improve reliability in a semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device having an oxide semiconductor film includes a gate electrode, a gate insulating film on the gate electrode, an oxide semiconduc...
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| creator | KAMINAGA MASAMI UBUNAI TOSHIMITSU KUROSAKI DAISUKE YAMAZAKI SHUNPEI HIZUKA JUNICHI NAKAZAWA YASUTAKA OKAZAKI KENICHI SHIMA YUKINORI |
| description | To suppress fluctuations in electrical characteristics and improve reliability in a semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device having an oxide semiconductor film includes a gate electrode, a gate insulating film on the gate electrode, an oxide semiconductor film on the gate insulating film, and a pair of electrodes on the oxide semiconductor film, and the oxide semiconductor film includes a channel region, and an n-type region in contact with the pair of electrodes, and the oxygen deficiency in the channel region is smaller than that in an n-type region.SELECTED DRAWING: Figure 1
【課題】酸化物半導体膜を有する半導体装置において、電気特性の変動を抑制すると共に、信頼性を向上させる。【解決手段】酸化物半導体膜を有する半導体装置であって、半導体装置は、ゲート電極と、ゲート電極上のゲート絶縁膜と、ゲート絶縁膜上の酸化物半導体膜と、酸化物半導体膜上の一対の電極と、を有し、酸化物半導体膜は、チャネル領域と、一対の電極と接するｎ型領域と、を有し、チャネル領域の酸素欠損は、ｎ型領域の酸素欠損よりも少ない。【選択図】図１ |
| format | Patent |
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【課題】酸化物半導体膜を有する半導体装置において、電気特性の変動を抑制すると共に、信頼性を向上させる。【解決手段】酸化物半導体膜を有する半導体装置であって、半導体装置は、ゲート電極と、ゲート電極上のゲート絶縁膜と、ゲート絶縁膜上の酸化物半導体膜と、酸化物半導体膜上の一対の電極と、を有し、酸化物半導体膜は、チャネル領域と、一対の電極と接するｎ型領域と、を有し、チャネル領域の酸素欠損は、ｎ型領域の酸素欠損よりも少ない。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200514&DB=EPODOC&CC=JP&NR=2020074412A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200514&DB=EPODOC&CC=JP&NR=2020074412A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAMINAGA MASAMI</creatorcontrib><creatorcontrib>UBUNAI TOSHIMITSU</creatorcontrib><creatorcontrib>KUROSAKI DAISUKE</creatorcontrib><creatorcontrib>YAMAZAKI SHUNPEI</creatorcontrib><creatorcontrib>HIZUKA JUNICHI</creatorcontrib><creatorcontrib>NAKAZAWA YASUTAKA</creatorcontrib><creatorcontrib>OKAZAKI KENICHI</creatorcontrib><creatorcontrib>SHIMA YUKINORI</creatorcontrib><title>MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE</title><description>To suppress fluctuations in electrical characteristics and improve reliability in a semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device having an oxide semiconductor film includes a gate electrode, a gate insulating film on the gate electrode, an oxide semiconductor film on the gate insulating film, and a pair of electrodes on the oxide semiconductor film, and the oxide semiconductor film includes a channel region, and an n-type region in contact with the pair of electrodes, and the oxygen deficiency in the channel region is smaller than that in an n-type region.SELECTED DRAWING: Figure 1
【課題】酸化物半導体膜を有する半導体装置において、電気特性の変動を抑制すると共に、信頼性を向上させる。【解決手段】酸化物半導体膜を有する半導体装置であって、半導体装置は、ゲート電極と、ゲート電極上のゲート絶縁膜と、ゲート絶縁膜上の酸化物半導体膜と、酸化物半導体膜上の一対の電極と、を有し、酸化物半導体膜は、チャネル領域と、一対の電極と接するｎ型領域と、を有し、チャネル領域の酸素欠損は、ｎ型領域の酸素欠損よりも少ない。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDydfQLdXN0DgkNclXwdQ3x8HdR8HdTCHb19XT293MJdQ7xD1JwcQ3zdHblYWBNS8wpTuWF0twMSm6uIc4euqkF-fGpxQWJyal5qSXxXgFGBkYGBuYmJoZGjsZEKQIAnrwlEQ</recordid><startdate>20200514</startdate><enddate>20200514</enddate><creator>KAMINAGA MASAMI</creator><creator>UBUNAI TOSHIMITSU</creator><creator>KUROSAKI DAISUKE</creator><creator>YAMAZAKI SHUNPEI</creator><creator>HIZUKA JUNICHI</creator><creator>NAKAZAWA YASUTAKA</creator><creator>OKAZAKI KENICHI</creator><creator>SHIMA YUKINORI</creator><scope>EVB</scope></search><sort><creationdate>20200514</creationdate><title>MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE</title><author>KAMINAGA MASAMI ; UBUNAI TOSHIMITSU ; KUROSAKI DAISUKE ; YAMAZAKI SHUNPEI ; HIZUKA JUNICHI ; NAKAZAWA YASUTAKA ; OKAZAKI KENICHI ; SHIMA YUKINORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020074412A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KAMINAGA MASAMI</creatorcontrib><creatorcontrib>UBUNAI TOSHIMITSU</creatorcontrib><creatorcontrib>KUROSAKI DAISUKE</creatorcontrib><creatorcontrib>YAMAZAKI SHUNPEI</creatorcontrib><creatorcontrib>HIZUKA JUNICHI</creatorcontrib><creatorcontrib>NAKAZAWA YASUTAKA</creatorcontrib><creatorcontrib>OKAZAKI KENICHI</creatorcontrib><creatorcontrib>SHIMA YUKINORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAMINAGA MASAMI</au><au>UBUNAI TOSHIMITSU</au><au>KUROSAKI DAISUKE</au><au>YAMAZAKI SHUNPEI</au><au>HIZUKA JUNICHI</au><au>NAKAZAWA YASUTAKA</au><au>OKAZAKI KENICHI</au><au>SHIMA YUKINORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE</title><date>2020-05-14</date><risdate>2020</risdate><abstract>To suppress fluctuations in electrical characteristics and improve reliability in a semiconductor device having an oxide semiconductor film.SOLUTION: A semiconductor device having an oxide semiconductor film includes a gate electrode, a gate insulating film on the gate electrode, an oxide semiconductor film on the gate insulating film, and a pair of electrodes on the oxide semiconductor film, and the oxide semiconductor film includes a channel region, and an n-type region in contact with the pair of electrodes, and the oxygen deficiency in the channel region is smaller than that in an n-type region.SELECTED DRAWING: Figure 1
【課題】酸化物半導体膜を有する半導体装置において、電気特性の変動を抑制すると共に、信頼性を向上させる。【解決手段】酸化物半導体膜を有する半導体装置であって、半導体装置は、ゲート電極と、ゲート電極上のゲート絶縁膜と、ゲート絶縁膜上の酸化物半導体膜と、酸化物半導体膜上の一対の電極と、を有し、酸化物半導体膜は、チャネル領域と、一対の電極と接するｎ型領域と、を有し、チャネル領域の酸素欠損は、ｎ型領域の酸素欠損よりも少ない。【選択図】図１</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MANUFACTURE METHOD OF SEMICONDUCTOR DEVICE |
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