SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

To provide: a semiconductor device in which an insulation material layer does not contain reinforcement fibers such as a glass cloth and a non-woven fabric and which achieves a finer metal thin film wiring layer, a smaller diameter of a metal via, and a thinner interlayer thickness; and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device 100 includes: one or more semiconductor elements 107a, 107b sealed by an insulation material 114b that contains no reinforcement fiber; insulation material layers 101, 108 including a plurality of metal thin film wiring layers 102 and metal vias 109 electrically connecting between the metal thin film wiring layers 102 and between electrodes 106 of the semiconductor elements 107a, 107b and the metal thin film wiring layers 102; and a warpage adjustment layer 123 disposed on a main surface side of one of the insulation material layers 101, 108 and canceling the warpage of the insulation material layers 101, 108 to reduce the warpage of the semiconductor device.SELECTED DRAWING: Figure 1 【課題】絶縁材料層にガラスクロスや不織布等の補強繊維を含まない、金属薄膜配線層のファイン化、金属ビアの小径化、及び層間厚の薄化を可能とする半導体装置及びその製造方法を提供する。【解決手段】半導体装置１００は補強繊維を含まない絶縁材料１１４ｂによって封止された１つないし複数の半導体素子１０７ａ、１０７ｂと、複数の金属薄膜配線層１０２と、金属薄膜配線層１０２間、及び、半導体素子１０７ａ、１０７ｂの電極１０６と金属薄膜配線層１０２とを電気的に接続する金属ビア１０９と、を含む絶縁材料層１０１、１０８と、絶縁材料層１０１、１０８の一方の主面側に配置され、絶縁材料層１０１、１０８の反りを相殺して、半導体装置の反りを低減する反り調整層１２３と、を備える。【選択図】図１