IMAGING APPARATUS

To provide an imaging apparatus that can prevent a dark current.SOLUTION: An imaging apparatus according to one aspect of the present disclosure comprises a semiconductor substrate 60 and pixels 10. The semiconductor substrate 60 includes a first surface, a second surface that is on an opposite side of the first surface, a support substrate 61 that is one example of a first area including an impurity of a first conductivity type, an n-type semiconductor layer 62n that is one example of a second area including an impurity of a second conductivity type and closer to the first surface than the first area, a p-type semiconductor layer 65p that is one example of a third area including an impurity of the first conductivity type and closer to the first surface than the second area, and a p-type area 66p that is one example of a fourth area penetrating the second area, connecting the first area with the third area, and including an impurity of the first conductivity type. The pixels 10 each include a photoelectric conversion part 12, and an electric charge storage area 67n that is one example of a first diffusion area being electrically connected to the photoelectric conversion part 12, including an impurity of the second conductivity type, located in the third area, and exposed to the first surface. In plan view, the fourth area overlaps an entirety of the first diffusion area.SELECTED DRAWING: Figure 3 【課題】暗電流を抑制することができる撮像装置を提供する。【解決手段】本開示の一態様に係る撮像装置は、半導体基板６０と画素１０とを備える。半導体基板６０は、第１面と、第１面とは反対側の第２面と、第１導電型の不純物を含む第１領域の一例である支持基板６１と、第２導電型の不純物を含み、第１領域よりも第１面に近い第２領域の一例であるｎ型半導体層６２ｎと、第１導電型の不純物を含み、第２領域よりも第１面に近い第３領域の一例であるｐ型半導体層６５ｐと、第２領域を貫通し、第１領域と第３領域とを接続する、第１導電型の不純物を含む第４領域の一例であるｐ型領域６６ｐと、を含む。画素１０は、光電変換部１２と、光電変換部１２に電気的に接続され、第２導電型の不純物を含み、第３領域内に位置し、第１面に露出した第１拡散領域の一例である電荷蓄積領域６７ｎと、を含む。平面視において、第４領域は第１拡散領域の全体と重なっている。【選択図】図３