SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

To further reduce an ON-resistance of a field-effect transistor.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode layer provided on the gate insulating film and containing impurity ions; and a sourc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANAGISAWA YUKI, FUTATSUKI TAKASHI
Format: Patent
Sprache:eng ; jpn
Schlagworte:
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