SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

To further reduce an ON-resistance of a field-effect transistor.SOLUTION: A semiconductor device comprises: a semiconductor substrate; a gate insulating film provided on the semiconductor substrate; a gate electrode layer provided on the gate insulating film and containing impurity ions; and a source or drain region provided on the semiconductor substrate at both sides of the gate electrode layer and containing conductivity type impurities. A concentration of the impurity ions of the gate electrode layer is higher than a concentration of the conductivity type impurities of the source or drain region.SELECTED DRAWING: Figure 4 【課題】電界効果トランジスタのオン抵抗をさらに低減させる。【解決手段】半導体基板と、前記半導体基板の上に設けられたゲート絶縁膜と、前記ゲート絶縁膜の上に設けられ、不純物イオンを含むゲート電極層と、前記ゲート電極層の両側の前記半導体基板に設けられ、導電型不純物を含むソース又はドレイン領域と、を備え、前記ゲート電極層の前記不純物イオンの濃度は、前記ソース又はドレイン領域の前記導電型不純物の濃度よりも高い、半導体装置。【選択図】図４