SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
To provide a semiconductor device, a solid-state imaging device and a method of manufacturing a semiconductor device capable of obtaining sufficient mechanical strength.SOLUTION: A semiconductor device comprises: a multilayer wiring layer configured by alternately laminating insulating layers and di...
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| Format: | Patent |
| Sprache: | eng ; jpn |
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| Zusammenfassung: | To provide a semiconductor device, a solid-state imaging device and a method of manufacturing a semiconductor device capable of obtaining sufficient mechanical strength.SOLUTION: A semiconductor device comprises: a multilayer wiring layer configured by alternately laminating insulating layers and diffusion prevention layers and in which wiring layers are provided; an air gap part provided in at least a part of the insulating layers; and a supporting part provided in at least a part of the air gap part and that supports the multilayer wiring layer.SELECTED DRAWING: Figure 1
【課題】十分な機械強度を得ることのできる半導体装置、固体撮像装置及び半導体装置の製造方法を提案する。【解決手段】半導体装置は、絶縁層と、拡散防止層とが交互に積層され、内部に配線層が設けられた多層配線層と、絶縁層の少なくとも一部に設けられた空隙部と、空隙部の少なくとも一部に設けられ、多層配線層を支持する支持部と、を備える。【選択図】図１ |
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