SEMICONDUCTOR DEVICE

To provide a semiconductor device using an oxide semiconductor capable of performing bipolar operation.SOLUTION: The semiconductor device includes: an oxide semiconductor layer, containing tin and tungsten, an average coordination number of oxygen atoms to tin atoms being larger than 3 and smaller t...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	SHINREI NOBUTAKA
Format:	Patent
Sprache:	eng ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	SHINREI NOBUTAKA
description	To provide a semiconductor device using an oxide semiconductor capable of performing bipolar operation.SOLUTION: The semiconductor device includes: an oxide semiconductor layer, containing tin and tungsten, an average coordination number of oxygen atoms to tin atoms being larger than 3 and smaller than 4; a first electrode electrically connected to a first end of the oxide semiconductor layer; a second electrode electrically connected to a second end of the oxide semiconductor layer opposite to the first end; and a control electrode facing a portion of the oxide semiconductor layer between the first end and the second end.SELECTED DRAWING: Figure 1 【課題】両極性動作が可能な酸化物半導体を用いた半導体装置を提供する。【解決手段】半導体装置は、錫およびタングステンを含み、錫原子に対する酸素原子の平均配位数が３よりも大きく、４よりも小さい酸化物半導体層と、前記酸化物半導体層の第１端部に電気的に接続された第１電極と、前記酸化物半導体層の前記第１端部とは反対側の第２端部に電気的に接続された第２電極と、前記酸化物半導体層の前記第１端部と前記第２端部との間の部分に向き合う制御電極と、を備える。【選択図】図１
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2020047811A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2020047811A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2020047811A3</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRgYGJuYWhoaOxkQpAgC8HR8Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>SHINREI NOBUTAKA</creator><creatorcontrib>SHINREI NOBUTAKA</creatorcontrib><description>To provide a semiconductor device using an oxide semiconductor capable of performing bipolar operation.SOLUTION: The semiconductor device includes: an oxide semiconductor layer, containing tin and tungsten, an average coordination number of oxygen atoms to tin atoms being larger than 3 and smaller than 4; a first electrode electrically connected to a first end of the oxide semiconductor layer; a second electrode electrically connected to a second end of the oxide semiconductor layer opposite to the first end; and a control electrode facing a portion of the oxide semiconductor layer between the first end and the second end.SELECTED DRAWING: Figure 1 【課題】両極性動作が可能な酸化物半導体を用いた半導体装置を提供する。【解決手段】半導体装置は、錫およびタングステンを含み、錫原子に対する酸素原子の平均配位数が３よりも大きく、４よりも小さい酸化物半導体層と、前記酸化物半導体層の第１端部に電気的に接続された第１電極と、前記酸化物半導体層の前記第１端部とは反対側の第２端部に電気的に接続された第２電極と、前記酸化物半導体層の前記第１端部と前記第２端部との間の部分に向き合う制御電極と、を備える。【選択図】図１</description><language>eng ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INORGANIC CHEMISTRY ; METALLURGY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200326&DB=EPODOC&CC=JP&NR=2020047811A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200326&DB=EPODOC&CC=JP&NR=2020047811A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHINREI NOBUTAKA</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>To provide a semiconductor device using an oxide semiconductor capable of performing bipolar operation.SOLUTION: The semiconductor device includes: an oxide semiconductor layer, containing tin and tungsten, an average coordination number of oxygen atoms to tin atoms being larger than 3 and smaller than 4; a first electrode electrically connected to a first end of the oxide semiconductor layer; a second electrode electrically connected to a second end of the oxide semiconductor layer opposite to the first end; and a control electrode facing a portion of the oxide semiconductor layer between the first end and the second end.SELECTED DRAWING: Figure 1 【課題】両極性動作が可能な酸化物半導体を用いた半導体装置を提供する。【解決手段】半導体装置は、錫およびタングステンを含み、錫原子に対する酸素原子の平均配位数が３よりも大きく、４よりも小さい酸化物半導体層と、前記酸化物半導体層の第１端部に電気的に接続された第１電極と、前記酸化物半導体層の前記第１端部とは反対側の第２端部に電気的に接続された第２電極と、前記酸化物半導体層の前記第１端部と前記第２端部との間の部分に向き合う制御電極と、を備える。【選択図】図１</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFeAUYGRgYGJuYWhoaOxkQpAgC8HR8Q</recordid><startdate>20200326</startdate><enddate>20200326</enddate><creator>SHINREI NOBUTAKA</creator><scope>EVB</scope></search><sort><creationdate>20200326</creationdate><title>SEMICONDUCTOR DEVICE</title><author>SHINREI NOBUTAKA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2020047811A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; jpn</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHINREI NOBUTAKA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHINREI NOBUTAKA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2020-03-26</date><risdate>2020</risdate><abstract>To provide a semiconductor device using an oxide semiconductor capable of performing bipolar operation.SOLUTION: The semiconductor device includes: an oxide semiconductor layer, containing tin and tungsten, an average coordination number of oxygen atoms to tin atoms being larger than 3 and smaller than 4; a first electrode electrically connected to a first end of the oxide semiconductor layer; a second electrode electrically connected to a second end of the oxide semiconductor layer opposite to the first end; and a control electrode facing a portion of the oxide semiconductor layer between the first end and the second end.SELECTED DRAWING: Figure 1 【課題】両極性動作が可能な酸化物半導体を用いた半導体装置を提供する。【解決手段】半導体装置は、錫およびタングステンを含み、錫原子に対する酸素原子の平均配位数が３よりも大きく、４よりも小さい酸化物半導体層と、前記酸化物半導体層の第１端部に電気的に接続された第１電極と、前記酸化物半導体層の前記第１端部とは反対側の第２端部に電気的に接続された第２電極と、前記酸化物半導体層の前記第１端部と前記第２端部との間の部分に向き合う制御電極と、を備える。【選択図】図１</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng ; jpn
recordid	cdi_epo_espacenet_JP2020047811A
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES
title	SEMICONDUCTOR DEVICE
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T17%3A20%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHINREI%20NOBUTAKA&rft.date=2020-03-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJP2020047811A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true