SEMICONDUCTOR DEVICE

To provide a semiconductor device using an oxide semiconductor capable of performing bipolar operation.SOLUTION: The semiconductor device includes: an oxide semiconductor layer, containing tin and tungsten, an average coordination number of oxygen atoms to tin atoms being larger than 3 and smaller than 4; a first electrode electrically connected to a first end of the oxide semiconductor layer; a second electrode electrically connected to a second end of the oxide semiconductor layer opposite to the first end; and a control electrode facing a portion of the oxide semiconductor layer between the first end and the second end.SELECTED DRAWING: Figure 1 【課題】両極性動作が可能な酸化物半導体を用いた半導体装置を提供する。【解決手段】半導体装置は、錫およびタングステンを含み、錫原子に対する酸素原子の平均配位数が３よりも大きく、４よりも小さい酸化物半導体層と、前記酸化物半導体層の第１端部に電気的に接続された第１電極と、前記酸化物半導体層の前記第１端部とは反対側の第２端部に電気的に接続された第２電極と、前記酸化物半導体層の前記第１端部と前記第２端部との間の部分に向き合う制御電極と、を備える。【選択図】図１